Design of a GaN HEMT power amplifier using resistive loaded harmonic tuning

Author

Preis, Sebastian ; Zihui Zhang ; Arnous, Mhd Tareq

Author_Institution

Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

552

Lastpage

555

Abstract

The proper termination of the 2^nd harmonic impedance is the basic task during the design of a harmonically tuned power amplifier. In addition to several approaches of defining fundamental and harmonic pairs with purely reactive harmonics, the harmonic components can be terminated resistive as well. This work presents a broadband GaN HEMT power amplifier with resistive 2^nd harmonic termination. The measured output power of 41.1 to 42.6 dBm was achieved covering a frequency range from 2.2 to 2.7 GHz. The drain efficiency of the amplifier ranged from 66.2 to 75.2 percent. Applying a LTE signal with 10 MHz bandwidth, a linearized average efficiency of 42 % was attained.

Keywords

III-V semiconductors; Long Term Evolution; UHF power amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; wideband amplifiers; GaN; LTE signal; amplifier drain efficiency; bandwidth 10 MHz; broadband GaN HEMT power amplifier; efficiency 42 percent; efficiency 66.2 percent to 75.2 percent; frequency 2.2 GHz to 2.7 GHz; harmonic components; harmonic impedance; harmonically tuned power amplifier; reactive harmonics; resistive harmonic termination; resistive loaded harmonic tuning; Bandwidth; Harmonic analysis; Microwave amplifiers; Microwave circuits; Microwave integrated circuits; Power amplifiers; HEMT; broadband amplifier; gallium nitride; harmonic tuning; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997916

Filename

6997916