DocumentCode :
1783543
Title :
A low magnetic bias sub-millimetre wave semiconductor junction circulator
Author :
Jawad, Ghassan N. ; Sloan, R.
Author_Institution :
Dept. of Electron. & Commun. Eng., Univ. of Baghdad, Baghdad, Iraq
fYear :
2014
fDate :
6-7 Oct. 2014
Firstpage :
640
Lastpage :
643
Abstract :
This paper presents a design for a semiconductor junction circulator to work in the sub-millimetre wave frequency range. An InSb disk is modelled for a low steady applied axial magnetic field. An approach was utilised to design the circulator with minimum required magnetic biasing by exploiting a frequency range above the extraordinary wave resonant frequency. Circulation at frequency of 650GHz with about 9% 10dB bandwidth was predicted using an applied magnetic field as low as 0.2T. The Green´s function description is verified using a commercially available electromagnetic simulation package with resultant electromagnetic field patterns given.
Keywords :
Green´s function methods; III-V semiconductors; electromagnetic fields; indium compounds; millimetre wave circulators; semiconductor junctions; Green´s function description; InSb; InSb disk; axial magnetic field; electromagnetic field patterns; electromagnetic simulation package; frequency 650 GHz; low magnetic bias; submillimetre wave semiconductor junction circulator; Circulators; Junctions; Magnetic resonance imaging; Magnetic semiconductors; Magnetic tunneling; Resonant frequency; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
Type :
conf
DOI :
10.1109/EuMIC.2014.6997938
Filename :
6997938
Link To Document :
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