• DocumentCode
    1784152
  • Title

    Wave propagation in piezoelectric layered structure of film bulk acoustic resonator

  • Author

    Feng Zhu ; Bin Wang ; Zheng-hua Qian

  • Author_Institution
    State Key Lab. of Mech. & Control of Mech. Struct., Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China
  • fYear
    2014
  • fDate
    Oct. 30 2014-Nov. 2 2014
  • Firstpage
    178
  • Lastpage
    181
  • Abstract
    In this paper, we consider the sandwich structure composed of silicon substrate, piezoelectric layer and electrode layers in the typical structure of FBAR. We assume a special solution in the form of harmonic wave in the piezoelectric layer, and substitute it into the simplified stress equations of motion and the charge equation of electrostatic. A correction to the solution assumed is obtained in order to satisfy these equations. Similarly, a correctional solution assumed in the form of harmonic wave in the silicon substrate can be obtained. We can substitute these correctional solutions into continuity conditions and boundary conditions. The relations of wave number and frequency are obtained. The dispersion curves are calculated from the relation. The frequencies when wave number is zero, the influence of the mass ratio of piezoelectric layer and electrode plate, and the vibration images are discussed further.
  • Keywords
    acoustic resonators; acoustic wave propagation; bulk acoustic wave devices; electrodes; piezoelectricity; sandwich structures; FBAR structure; electrode layers; electrostatic charge equation; film bulk acoustic resonator; harmonic wave; piezoelectric layered structure; sandwich structure; silicon substrate; simplified stress equations of motion; vibration images; wave number; wave propagation; Dispersion; Electrodes; Equations; Film bulk acoustic resonators; Mathematical model; Silicon; Vibrations; Dispersion curve; FBARs; Piezoelectric layered structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA), 2014 Symposium on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-6424-6
  • Type

    conf

  • DOI
    10.1109/SPAWDA.2014.6998555
  • Filename
    6998555