Title :
Simulation and experiment of high-overtone bulk acoustic resonators
Author :
Jian Li ; Meng-wei Liu ; Cheng-hao Wang
Author_Institution :
Inst. of Acoust., Beijing, China
fDate :
Oct. 30 2014-Nov. 2 2014
Abstract :
In this paper, the influence of the thickness and materials of layers (top electrode, piezoelectric film and substrate) on the resonant characteristics (resonant frequency, effective electromechanical coupling coefficient Keff2 and quality factor Q) of HBAR is investigated using the four-layer thickness extension mode composite resonator model. Some adjustment can be made to obtain the desired resonance and performance. HBAR based on Al/ZnO/Al sandwich layers on c-axis sapphire substrate is measured to obtain its resonant characteristics, and compared with those derived from numerical simulation. The experiment shows that the spacing of resonance frequency Δf and center frequency f0 are almost agreed with the numerical simulation, which is about 14MHz and 1.9GHz, respectively, while the maximum of Keff2 and Q is less than the simulation.
Keywords :
II-VI semiconductors; acoustic resonators; aluminium; bulk acoustic wave devices; metal-semiconductor-metal structures; numerical analysis; sandwich structures; wide band gap semiconductors; zinc compounds; Al-ZnO-Al; Al-ZnO-Al sandwich layers; Al2O3; c-axis sapphire substrate; center frequency; four-layer thickness extension mode composite resonator model; high-overtone bulk acoustic resonators; numerical simulation; resonance frequency; resonant characteristics; Acoustics; Electrodes; Piezoelectric films; Resonant frequency; Substrates; Zinc oxide; HBAR; Keff2; Mechanical loss; Q;
Conference_Titel :
Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA), 2014 Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-6424-6
DOI :
10.1109/SPAWDA.2014.6998560