DocumentCode
1784188
Title
Resistive silicon microstructure for embedding in aluminium during casting
Author
Dumstorff, Gerrit ; Lang, Walter
Author_Institution
Inst. of Microsensors, Actuators, & Syst. (IMSAS), Univ. of Bremen, Bremen, Germany
fYear
2014
fDate
8-11 July 2014
Firstpage
582
Lastpage
586
Abstract
A resistive silicon microstructure embedded in aluminium is presented. For the resistive structure a boron-doped poly-silicon on a silicon substrate has been used. The passivation of the structure was done by thick film processing. Half of the sensor was integrated in aluminium in a casting process. Due to the thick film passivation the sensor could successfully be integrated in aluminium. Sensors had been characterized by measuring the temperature dependent resistance of the microstructure. Beside embedding the sensor can also be used for other harsh environments.
Keywords
aluminium; casting; passivation; silicon; substrates; thick films; aluminium; boron-doped polysilicon; casting process; resistive silicon microstructure; silicon substrate; structure passivation; thick film passivation; thick film processing; Aluminum; Casting; Resistance; Silicon; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Intelligent Mechatronics (AIM), 2014 IEEE/ASME International Conference on
Conference_Location
Besacon
Type
conf
DOI
10.1109/AIM.2014.6878141
Filename
6878141
Link To Document