GaN-Based White LEDs With CIS/ZnS Quantum Dots Synthesized Using Polyetheramine as Solvent

Author

Wen-Jui Chiang ; Shih-Chang Shei ; Shoou-Jinn Chang

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan

Volume

51

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

1

Lastpage

6

Abstract

We propose a fast and low-temperature method to synthesize CuInS₂/ZnS quantum dots (CIS/ZnS QDs) using polyetheramine (D400) as solvent. It was found that the CIS/ZnS QDs synthesized at 140 °C exhibited a broad photoluminescence (PL) emission bandwidth (i.e., 135 nm) and a small PL blueshifted (i.e., 20 nm) as we coated the ZnS shells onto the CIS cores. Compared with the conventional GaN-based white light-emitting diodes with phosphor only, it was found that we could improve color rendering index and correlated color temperature by adding the CIS/ZnS QDs.

Keywords

II-VI semiconductors; III-V semiconductors; copper compounds; gallium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor growth; semiconductor quantum dots; spectral line shift; ternary semiconductors; wide band gap semiconductors; zinc compounds; GaN-CuInS₂-ZnS; GaN-based white LED; color rendering index; correlated color temperature; low-temperature method; photoluminescence blueshift; photoluminescence emission bandwidth; polyetheramine; quantum dots; temperature 140 degC; Absorption; Color; Light emitting diodes; Phosphors; Quantum dots; Solvents; Temperature measurement; CIS/ZnS; GaN; polyetheramine; quantum dots; white LEDs;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2015.2388755

Filename

7009954