Effects of temperature on frequency properties of FBAR

Author

De-jin Huang ; Ji Wang

Author_Institution

Dept. of Eng. Mech., Ningbo Univ., Ningbo, China

fYear

2014

fDate

Oct. 30 2014-Nov. 2 2014

Firstpage

379

Lastpage

382

Abstract

This paper investigated the effects of temperature on resonance properties of Film Bulk Acoustic Resonator (FBAR) in thickness-stretch mode. Based on the fundamental piezoelastic equations of piezoelectric material, the vibration equation of ideal FBAR under sine excitation voltage is derived. The solution is then obtained by using of the boundary conditions. The series and parallel resonance frequency were presented, and the effects of temperature on resonance frequency, bandwidth, and effective electromechanical coupling coefficient were discussed. A numerical example was presented to show the effects. These results are useful for the improvement of designing FBAR.

Keywords

acoustic resonators; bulk acoustic wave devices; crystal resonators; dielectric resonance; piezoelectric thin films; piezoelectricity; vibrations; boundary conditions; effective electromechanical coupling coefficient; film bulk acoustic resonator; fundamental piezoelastic equations; parallel resonance frequency; piezoelectric material; series resonance frequency; sine excitation voltage; temperature effect; thickness-stretch mode; vibration equation; Bandwidth; Couplings; Equations; Film bulk acoustic resonators; Impedance; Resonant frequency; Temperature; Bandwidth; FBAR; Resonance frequency; Temperature effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA), 2014 Symposium on

Conference_Location

Beijing

Print_ISBN

978-1-4799-6424-6

Type

conf

DOI

10.1109/SPAWDA.2014.6998603

Filename

6998603