Title :
Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture
Author :
Mikolasek, M. ; Vojs, M. ; Varga, M. ; Babchenko, O. ; Izak, T. ; Marton, M. ; Kromka, A. ; Harmatha, L.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
The paper deals with electrical characterization of nanocrystalline diamond / p- type crystalline silicon heterostructures. The diamond films were prepared with and without nitrogen addition into CH4/CO2/H2 gas mixture during the deposition. The introduced nitrogen promoted amorphization instead of creating sp2 domains. The structure with nitrogen exhibits shallow donor state with energy of 0.28 eV. It is suggested that origin of such a state is related to nitrogen atoms trapped at the vacancies.
Keywords :
amorphisation; diamond; elemental semiconductors; gas mixtures; nanostructured materials; semiconductor-insulator boundaries; silicon; thin films; vacancies (crystal); C; C-Si; amorphization; diamond film deposition; electrical characterization; electron volt energy 0.28 eV; gas mixture; nanocrystalline diamond-p- type crystalline silicon heterostructure; shallow donor state; sp2 domain; structural property; trapped nitrogen atom; vacancies; Conductivity; Current measurement; Diamonds; Films; Nitrogen; Resistance; Temperature measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998640
