Radiation hardness of 4H-SiC structuresues

Author

Kosa, A. ; Benkovska, J. ; Stuchlikova, L. ; Buc, D. ; Dubecky, F. ; Harmatha, L.

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

Deep level transient spectroscopy is utilized to investigate radiation induced defects in three types of 4H-SiC Schottky diode structures by combined neutron and gamma bombardment and fast electron irradiation. Main attention is devoted to the comparison of observed spectra by non irradiated and irradiated structures in order to evaluate the radiation hardness of these structures. As a significant deep energy level the Z1/Z2 centre present in all structures is reported.

Keywords

Schottky diodes; deep level transient spectroscopy; electron beam effects; gamma-ray effects; neutron effects; radiation hardening (electronics); silicon compounds; wide band gap semiconductors; Schottky diode structure; SiC; Z1/Z2 centre; deep energy level; deep level transient spectroscopy; fast electron irradiation; gamma bombardment; irradiated structure; neutron bombardment; nonirradiated structure; radiation hardness; radiation induced defect; Energy states; Materials; Neutrons; Physics; Radiation effects; Schottky diodes; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998641

Filename

6998641