Electrical properties of semi-insulating GaAs irradiated with 5 MeV electrons

Author

Bohacek, P. ; Zat´ko, B. ; Sagatova, A. ; Hybler, P. ; Sekacova, M.

Author_Institution

Inst. of Electr. Eng., Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

The resistivity, Hall coefficient, Hall mobility, and Hall concentration in undoped semi-insulating GaAs samples irradiated by 5 MeV electrons of various cumulative doses ranging from 1kGy to 24 kGy and different dose rate were measured and analysed at the temperature 400 K and 300 K. The resistivity and the electron Hall concentration decrease while Hall coefficient and the electron Hall mobility increase with increasing cumulative electron dose. The electron Hall mobility increased from 6950 cm²/Vs to about 7680 cm²/Vs at 300 K both samples irradiated with the cumulative electron dose of 24 kGy.

Keywords

Hall mobility; III-V semiconductors; electrical resistivity; electron beam effects; electron mobility; gallium arsenide; GaAs; Hall coefficient; cumulative electron dose; electrical properties; electrical resistivity; electron Hall concentration; electron Hall mobility; electron volt energy 5 MeV; radiation absorbed dose 1 kGy to 24 kGy; semi-insulating GaAs materials; temperature 300 K; temperature 400 K; Conductivity; Electric variables measurement; Gallium arsenide; Hall effect; Radiation effects; Silicon; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998642

Filename

6998642