Title :
M/Si-GaAs/M diode: Role of the metal contact in electrical transport, a-particle and photon detection
Author :
Dubecky, F. ; Zat´ko, B. ; Vanko, G. ; Hubik, P. ; Oswald, J. ; Kindl, D. ; Gombia, E. ; Kovac, J. ; Sagatova, A. ; Necas, V.
Author_Institution :
Inst. of Electr. Eng., Bratislava, Slovakia
Abstract :
M/Semi-insulating (SI) GaAs/M diodes with novel Mg-based metallization are investigated using current-voltage measurement, α-particle and photon detection. An anomalous decrease of the reverse current and peculiar photon spectra has been observed with such contact explainable by a strong electron accumulation due to the creation of a quasi-degenerate region at the Mg/SI-GaAs interface.
Keywords :
III-V semiconductors; MIM devices; alpha-particle spectra; electric current measurement; gallium arsenide; magnesium; photons; semiconductor device metallisation; semiconductor diodes; voltage measurement; α-particle; GaAs; alpha particle; current-voltage measurement; diode; electrical transport; electron accumulation; metal contact; photon detection; photon spectra; quasidegenerate region; reverse current; Breakdown voltage; Current measurement; Metallization; Photonics; Silicon; Voltage measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998643
