Transition from A-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen

Author

Sutta, P. ; Calta, P. ; Mullerova, J. ; Netrvalova, M. ; Medlin, R. ; Savkova, J. ; Vavrunkova, V.

Author_Institution

New Technol. - Res. Centre, Univ. of West Bohemia, Pilsen, Czech Republic

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

Series of a-SiN:H thin films similar in thickness (380 ± 10 nm) and a-Si:H/a-Si₃N₄ multi-layered films (515 ± 20 nm) were prepared by PECVD technology from silane mixed with argon (90 % Ar/10 % SiH4) on Corning Eagle 2000 glass, SiO₂ and silicon substrates. Deposition of thin films was carried out on a Samco PD 220 NA PECVD system. Multi-layered films were consequently annealed at high temperatures (700-1100°C) in order to obtain silicon nanocrystals embedded in a dielectric matrix suitable for photovoltaic and photonic applications. X-ray diffraction, Raman and FTIR spectroscopies, TEM, SEM, UV Vis spectrophotometry and spectroscopic ellipsometry were used for the evaluation of material properties of the films.

Keywords

Fourier transform infrared spectra; Raman spectra; amorphous semiconductors; elemental semiconductors; hydrogen; multilayers; nanostructured materials; plasma CVD; silicon; silicon compounds; thin films; ultraviolet spectra; visible spectra; FTIR spectroscopy; Raman spectroscopy; SEM; Samco PD 220 NA PECVD system; Si:H-Si₃N₄; SiN:H; TEM; UV-vis spectrophotometry; X-ray diffraction; corning eagle 2000 glass; dielectric matrix; multilayered films; spectroscopic ellipsometry; temperature 700 degC to 1100 degC; thin films; Annealing; Films; Nitrogen; Photonic band gap; Plasma temperature; Silicon; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998644

Filename

6998644