Title :
Electron irradiation effects on the spectrometric characteristics of GaAs detectors
Author :
Sagatova, A. ; Zat´ko, B. ; Sedlackova, K. ; Necas, V. ; Fulop, M.
Author_Institution :
Inst. of Nucl. & Phys. Eng., Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
The spectrometric characteristics of semi-insulating GaAs detectors irradiated by 5 MeV electrons to a dose of 24 kGy at three different dose rates (20, 40 and 80kGy/h) were studied. A similar decrease of CCE (Charge Collection Efficiency) after irradiation by 7.5% of CCE was observed with all groups of investigated detectors. On the other hand, an increase of detection efficiency after irradiation was shown. The influence of the dose rate during irradiation on spectrometric properties of detectors was not proved in chosen range of dose rate.
Keywords :
III-V semiconductors; gallium arsenide; radiation detection; radiation effects; CCE; GaAs; charge collection efficiency; electron irradiation effect; electron volt energy 5 MeV; radiation absorbed dose 20 kGy; radiation absorbed dose 24 kGy; radiation absorbed dose 40 kGy; radiation absorbed dose 80 kGy; semiinsulating detector; spectrometric characteristics; Detectors; Educational institutions; Electron beams; Gallium arsenide; Radiation effects; Silicon; Voltage measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998646
