Title :
Application of real time in-situ interferometry for the observation of GaN/Si MOVPE growth process
Author :
Szymanski, T. ; Wosko, M. ; Paszkiewicz, B. ; Indykiewicz, K. ; Paszkiewicz, R.
Author_Institution :
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland
Abstract :
In this paper the wide range of application of real time in situ reflectance signal observation based on four GaN on Si samples grown is shown. Mean reflectance value of oscillations for GaN growth and recovery times were extracted from reflectance traces acquired in situ. Moreover, RMS variation of grown samples were correlated with in situ monitoring that were in good agreement with presented model. We present what additional information can be extracted by in-situ interferometry.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; interferometry; multilayers; reflectivity; semiconductor growth; surface roughness; vapour phase epitaxial growth; wide band gap semiconductors; GaN-Si; MOVPE growth process; RMS variation; Si; mean reflectance; oscillations; real time in situ reflectance signal; real time in-situ interferometry; Epitaxial growth; Gallium nitride; Optical reflection; Reflectivity; Silicon; Substrates;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998650
