III-nitride nano-LEDs for single photon lithography

Author

Trellenkamp, Stefan ; Mikulics, M. ; Winden, A. ; Arango, Y.C. ; Moers, J. ; Marso, M. ; Grutzmacher, D. ; Hardtdegen, H.

Author_Institution

Peter Grunberg Inst. (PGI-9), Forschungszentrum Julich, Jülich, Germany

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits.

Keywords

III-V semiconductors; gallium compounds; light emitting diodes; nanophotonics; optical testing; photolithography; photoluminescence; sapphire; semiconductor quantum wells; wide band gap semiconductors; GaN-Al₂O₃; III-nitride nanoLED; band edge luminescence energy; p-GaN/MQW/n-GaN/sapphire based nano-LEDs; single photon lithography; Arrays; Fabrication; Layout; Lithography; Nanoscale devices; Nanostructures; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998652

Filename

6998652