Title :
Novel double-level-T-gate technology
Author :
Fox, A. ; Mikulics, M. ; Hardtdegen, H. ; Trellenkamp, Stefan ; Arango, Y.C. ; Grutzmacher, D. ; Sofer, Z. ; Gregusova, D. ; Novak, Jiri ; Kordos, P. ; Marso, M.
Author_Institution :
Peter Grunberg Inst. (PGI-9), Forschungszentrum Julich, Julich, Germany
Abstract :
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs) were fabricated on an AlGaN/GaN/sapphire material structure with an original gate length Lg of 2 μm. Their cutoff frequency of 6 GHz was improved to 60 GHz by etching the gate to a 200 nm length double T-gate contact.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; high electron mobility transistors; microwave transistors; nanoelectronics; photolithography; sapphire; semiconductor device manufacture; wide band gap semiconductors; AlGaN-GaN-Al2O3; HEMT; T-gate feet; double T-gate contact; double-level-T-gate technology; frequency 6 GHz; frequency 60 GHz; high electron mobility transistors; metal gate interlayer; optical lithography; sapphire material structure; size 100 nm; size 2 mum; size 200 nm; wet etching; Aluminum gallium nitride; Etching; Fabrication; HEMTs; Lithography; Logic gates; MODFETs;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998653
