DocumentCode :
1784348
Title :
New phenanthrene-based organic semiconductor material for electronic devices
Author :
Novota, M. ; Micjan, M. ; Nevrela, J. ; Flickyngerova, S. ; Juhasz, P. ; Misicak, R. ; Putala, M. ; Jakabovic, J. ; Weis, M.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
fYear :
2014
fDate :
20-22 Oct. 2014
Firstpage :
1
Lastpage :
4
Abstract :
This work describes the thin-film fabrication technology and characterization of devices based on organic semiconductor 3,6-bis(5`-hexyl-2,2`-bithiophen-5-yl)phenanthrene (H2T36Phen). The surface morphology, optical, and electrical properties are investigated for thin organic films. It demonstrates that the solution-based depositions require different substrate surface treatment than the evaporation-based deposition.
Keywords :
organic field effect transistors; organic semiconductors; semiconductor device models; surface morphology; surface treatment; H2T36Phen; electrical properties; evaporation-based deposition; optical properties; phenanthrene-based organic semiconductor material; solution-based depositions; substrate surface treatment; surface morphology; thin organic films; thin-film fabrication technology; Films; OFETs; Optical device fabrication; Optical fibers; Organic semiconductors; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
Type :
conf
DOI :
10.1109/ASDAM.2014.6998655
Filename :
6998655
Link To Document :
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