Title :
Different polarities of InN (0001) heterostructures on Si (111) substrates
Author :
Bairamis, A.I. ; Adikimenakis, A. ; Aijagunna, A.O. ; Kehagias, T. ; Dimitrakopulos, G.P. ; Kioseoglou, J. ; Komninou, Ph ; Zervos, C. ; Kuzmik, J. ; Georgakilas, A.
Author_Institution :
Microelectron. Res. Group, IESL/FORTH, Heraklion, Greece
Abstract :
The growth processes of plasma assisted molecular beam epitaxy (PAMBE) that result to heteroepitaxial growth of high crystal quality single polarity {0001} InN thin films on Si (111) substrates, with either N-face or In-face polarity, have been determined. N-face InN (000-1) films can be grown using high temperature AlN nucleation layer on Si (111) and In-face In (0001) films can be grown by direct InN nucleation on Si at low temperature and N-rich conditions.
Keywords :
III-V semiconductors; elemental semiconductors; indium compounds; molecular beam epitaxial growth; nucleation; plasma materials processing; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; silicon; wide band gap semiconductors; In-face In (0001) films; In-face polarity; InN (0001) heterostructure polarities; InN-Si; N-face InN (000-1) films; N-face polarity; N-rich condition; Si (111) substrates; direct InN nucleation; heteroepitaxial growth; high crystal quality single polarity {0001} InN thin films; high temperature AlN nucleation layer; low temperature condition; plasma assisted molecular beam epitaxy; Buffer layers; Gallium nitride; III-V semiconductor materials; Scanning electron microscopy; Silicon; Substrates;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998663
