Different polarities of InN (0001) heterostructures on Si (111) substrates

Author

Bairamis, A.I. ; Adikimenakis, A. ; Aijagunna, A.O. ; Kehagias, T. ; Dimitrakopulos, G.P. ; Kioseoglou, J. ; Komninou, Ph ; Zervos, C. ; Kuzmik, J. ; Georgakilas, A.

Author_Institution

Microelectron. Res. Group, IESL/FORTH, Heraklion, Greece

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

The growth processes of plasma assisted molecular beam epitaxy (PAMBE) that result to heteroepitaxial growth of high crystal quality single polarity {0001} InN thin films on Si (111) substrates, with either N-face or In-face polarity, have been determined. N-face InN (000-1) films can be grown using high temperature AlN nucleation layer on Si (111) and In-face In (0001) films can be grown by direct InN nucleation on Si at low temperature and N-rich conditions.

Keywords

III-V semiconductors; elemental semiconductors; indium compounds; molecular beam epitaxial growth; nucleation; plasma materials processing; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; silicon; wide band gap semiconductors; In-face In (0001) films; In-face polarity; InN (0001) heterostructure polarities; InN-Si; N-face InN (000-1) films; N-face polarity; N-rich condition; Si (111) substrates; direct InN nucleation; heteroepitaxial growth; high crystal quality single polarity {0001} InN thin films; high temperature AlN nucleation layer; low temperature condition; plasma assisted molecular beam epitaxy; Buffer layers; Gallium nitride; III-V semiconductor materials; Scanning electron microscopy; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998663

Filename

6998663