Title :
Time resolved EBIC study of InAlN/GaN HFETs
Author :
Satka, Alexander ; Priesol, J. ; Bernat, M. ; Donoval, Daniel ; Kovac, J. ; Allsopp, D.W.E. ; Kuzmik, J.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia
Abstract :
Transient phenomena in depletion-mode Gallium Nitride (GaN) Heterostructure Field-Effect Transistor (HFET) structures biased to various operation points corresponding to their real applications has been studied using Time-Resolved Electron Beam Induced Current (TREBIC) method. It has been found, that the amplitude and shape of the transient response depends on the gate voltage VGs and position of the electron beam in the active region of the HFET. Inhomogeneous lateral build-up and recovery of electric field has been observed at the gate in the drain access region of the HFETs, attributed to inhomogeneous distribution of the trapping centres in proximity of the Schottky gate electrode.
Keywords :
EBIC; III-V semiconductors; aluminium compounds; electric fields; electron beams; gallium compounds; high electron mobility transistors; indium compounds; transient response; wide band gap semiconductors; EBIC; HFET; InAlN-GaN; Schottky gate electrode; electric field; gate voltage; heterostructure field-effect transistor; time-resolved electron beam induced current; transient response; trapping centres; Gallium nitride; HEMTs; Logic gates; MODFETs; Nonuniform electric fields; Time factors;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998666
