Title :
Influence of structure geometry and bulk traps on switching transients of InAlN/GaN HEMT
Author :
Marek, Jiri ; Satka, Alexander ; Donoval, Daniel ; Molnar, Miklos ; Priesol, J. ; Chvala, Ales ; Pribytny, Patrik
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia
Abstract :
Impact of structure geometry and bulk traps on the performance of the n++GaN/InAlN/AlN/GaN high electron mobility transistor (HEMT) using two-dimensional Sentaurus TCAD simulation tool were investigated. Simulations were performed by the electrophysical models calibrated on real devices. The results indicate a significant influence of both acceptor and donor traps on device switching characteristics.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device models; technology CAD (electronics); wide band gap semiconductors; HEMT; acceptor and traps; bulk traps; device switching; donor traps; electrophysical models; high electron mobility transistor; structure geometry; switching transients; two-dimensional Sentaurus TCAD simulation tool; Electron traps; Gallium nitride; HEMTs; Logic gates; Performance evaluation; Switches; Transient analysis;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998669
