Simulative study on physical modelling of submicrometer highly-strained In0.8Ga0.2As/AlAs resonant tunnelling diode

Author

Jubadi, W.M. ; Md Zawawi, M.A. ; Missous, Mohamed

Author_Institution

Sch. of Electr. Eng. & Electron., Univ. of Manchester, Manchester, UK

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

This work presents a physical modelling for an in-house fabricated submicron InGaAs/AlAs double barrier Resonant Tunnelling diode (RTD). The modelling is developed in ATLAS SILVACO to extend the study of advanced III-V quantum devices. The Negative Differential Resistance (NDR) current and the peak-to-valley current ratio (PVCR) are simulated and validated with measurement data. The effects of structural parameters such as barrier width, spacer width, quantum well thickness and doping on current-voltage characteristics of RTD are investigated.

Keywords

III-V semiconductors; aluminium compounds; indium compounds; resonant tunnelling diodes; semiconductor device models; In_0.8Ga_0.2As-AlAs; advanced quantum device; double barrier resonant tunnelling diode; highly strained resonant tunnelling diode; negative differential resistance current; peak-to-valley current ratio; physical modelling; submicrometer resonant tunnelling diode; Current density; Doping; Mathematical model; Performance evaluation; Resistance; Resonant tunneling devices; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998671

Filename

6998671