DLTS study of electrically active defects in triple quantum well InGaAsN/GaAs heterostructures

Author

Kosa, A. ; Stuchlikova, L. ; Benko, P. ; Jakus, J. ; Harmatha, L. ; Kovac, J. ; Sciana, B. ; Dawidowski, W. ; Radziewicz, D. ; Pucicki, D. ; Tlaczala, M.

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

Deep Level Transient Fourier Spectroscopy study of charge carrier emission from quantum wells and electrically active defects in triple quantum well InGaAsN/GaAs heterostructures is discussed. Main attention is focused on the comparison and evaluation of measured spectra and to state the conditions of quantum well charge carrier emission identification. The presence of several deep energy levels and their parameters typical for GaAs are reported.

Keywords

III-V semiconductors; deep level transient spectroscopy; gallium arsenide; indium compounds; semiconductor quantum wells; DLTS; InGaAsN-GaAs; charge carrier emission; deep energy level; deep level transient Fourier spectroscopy; electrically active defects; indium gallium arsenide nitrogen-gallium arsenide heterostructure; triple quantum well; Charge carriers; Educational institutions; Gallium arsenide; Indium; Nitrogen; Semiconductor device measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998676

Filename

6998676