Title :
Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions
Author :
Zehetner, J. ; Vanko, G. ; Choleva, P. ; Dzuba, J. ; Ryger, I. ; Lalinsky, T.
Author_Institution :
Res. Centre for Microtechnol., Univ. of Appl. Sci., Dornbirn, Austria
Abstract :
In order to improve the stability, sensitivity or efficiency of AlGaN/GaN based sensors employing high electron mobility transistors (HEMTs), Schottky diodes and/or resistors they should be integrated into micro-electro-mechanical-systems (MEMS). The creation of appropriate diaphragms and/or cantilevers is necessary for the verification of sensing properties of such MEMS sensors. In this paper, we present possible approaches to improve the fabrication of micromechanic structures in bulk SiC substrates with epitaxial AlGaN/GaN heterostructures using femtosecond laser ablation to fabricate SiC diaphragms. The objective of this work is also to point at the backside damaging effects and to find an optimal method for its elimination or suppression.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; high electron mobility transistors; laser ablation; microsensors; silicon compounds; wide band gap semiconductors; AlGaN-GaN; GaN-SiC; HEMT; MEMS sensors; Schottky diodes; SiC substrates; backside damaging; epitaxial heterostructures; femtosecond laser ablation technique; high electron mobility transistors; microelectromechanical systems; micromechanic structures fabrication; Aluminum gallium nitride; Gallium nitride; Laser ablation; Micromechanical devices; Sensors; Silicon carbide; Substrates;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998693
