• DocumentCode
    1784425
  • Title

    AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures

  • Author

    Vanko, G. ; Vojs, M. ; Izak, T. ; Potocky, S. ; Choleva, P. ; Marton, M. ; Ryger, I. ; Dzuba, J. ; Lalinsky, T.

  • Author_Institution
    Inst. of Electr. Eng., Bratislava, Slovakia
  • fYear
    2014
  • fDate
    20-22 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work, we present an application of NCD layers as backside cooling for AlGaN/GaN heterostructures grown on Si substrates. In this case, diamond nucleation is the most limiting technological step due to low mechanical stability of GaN membranes. We observed that standard nucleation techniques (ultrasonic seeding or bias enhanced nucleation) caused cracking of the membranes or not appropriate nucleation efficiency in the Z-depth of structures. Therefore we implemented PVA polymer consisting of diamond powder as seeding composite which resulted in a successful growth of diamond thin film.
  • Keywords
    III-V semiconductors; aluminium compounds; coating techniques; cooling; cracks; diamond; gallium compounds; high electron mobility transistors; high-temperature electronics; mechanical stability; membranes; nucleation; silicon; wide band gap semiconductors; AlGaN-GaN; NCD layers; PVA polymer; Si; Z-depth structure; backside cooling; bias enhanced nucleation; diamond coating; diamond nucleation efficiency; diamond powder thin film; heterostructures; high electron mobility transistors; high temperatures; low mechanical stability; membrane cracking; micromembranes; standard nucleation techniques; ultrasonic seeding composites; Aluminum gallium nitride; Diamonds; Etching; Gallium nitride; HEMTs; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    978-1-4799-5474-2
  • Type

    conf

  • DOI
    10.1109/ASDAM.2014.6998694
  • Filename
    6998694