DocumentCode
1784425
Title
AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures
Author
Vanko, G. ; Vojs, M. ; Izak, T. ; Potocky, S. ; Choleva, P. ; Marton, M. ; Ryger, I. ; Dzuba, J. ; Lalinsky, T.
Author_Institution
Inst. of Electr. Eng., Bratislava, Slovakia
fYear
2014
fDate
20-22 Oct. 2014
Firstpage
1
Lastpage
4
Abstract
In this work, we present an application of NCD layers as backside cooling for AlGaN/GaN heterostructures grown on Si substrates. In this case, diamond nucleation is the most limiting technological step due to low mechanical stability of GaN membranes. We observed that standard nucleation techniques (ultrasonic seeding or bias enhanced nucleation) caused cracking of the membranes or not appropriate nucleation efficiency in the Z-depth of structures. Therefore we implemented PVA polymer consisting of diamond powder as seeding composite which resulted in a successful growth of diamond thin film.
Keywords
III-V semiconductors; aluminium compounds; coating techniques; cooling; cracks; diamond; gallium compounds; high electron mobility transistors; high-temperature electronics; mechanical stability; membranes; nucleation; silicon; wide band gap semiconductors; AlGaN-GaN; NCD layers; PVA polymer; Si; Z-depth structure; backside cooling; bias enhanced nucleation; diamond coating; diamond nucleation efficiency; diamond powder thin film; heterostructures; high electron mobility transistors; high temperatures; low mechanical stability; membrane cracking; micromembranes; standard nucleation techniques; ultrasonic seeding composites; Aluminum gallium nitride; Diamonds; Etching; Gallium nitride; HEMTs; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location
Smolenice
Print_ISBN
978-1-4799-5474-2
Type
conf
DOI
10.1109/ASDAM.2014.6998694
Filename
6998694
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