Title :
Determination of defect states in P3HT material for solar cell application
Author :
Juhasz, P. ; Stuchlikova, L. ; Micjan, M. ; Harmatha, L. ; Jakabovic, J. ; Weis, M.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
The defect states are investigated in ITO/P3HT/In organic diode structure by steady-state current-voltage technique and deep-level transient spectroscopy (DLTS) method. The temperature dependencies are used to evaluate charge transport activation energies. The activation energy of about 0.15 eV estimated from the current-voltage measurement as well as from the DLTS technique represents the dominant defect state in P3HT.
Keywords :
organic semiconductors; solar cells; transfer functions; DLTS method; P3HT material; charge transport activation energies; current-voltage measurement; deep-level transient spectroscopy; defect states determination; organic diode structure; solar cell application; steady-state current-voltage technique; Energy measurement; Indium tin oxide; Photovoltaic cells; Radiative recombination; Semiconductor device measurement; Temperature measurement; Voltage measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998702
