DocumentCode
1784439
Title
Determination of defect states in P3HT material for solar cell application
Author
Juhasz, P. ; Stuchlikova, L. ; Micjan, M. ; Harmatha, L. ; Jakabovic, J. ; Weis, M.
Author_Institution
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
fYear
2014
fDate
20-22 Oct. 2014
Firstpage
1
Lastpage
4
Abstract
The defect states are investigated in ITO/P3HT/In organic diode structure by steady-state current-voltage technique and deep-level transient spectroscopy (DLTS) method. The temperature dependencies are used to evaluate charge transport activation energies. The activation energy of about 0.15 eV estimated from the current-voltage measurement as well as from the DLTS technique represents the dominant defect state in P3HT.
Keywords
organic semiconductors; solar cells; transfer functions; DLTS method; P3HT material; charge transport activation energies; current-voltage measurement; deep-level transient spectroscopy; defect states determination; organic diode structure; solar cell application; steady-state current-voltage technique; Energy measurement; Indium tin oxide; Photovoltaic cells; Radiative recombination; Semiconductor device measurement; Temperature measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location
Smolenice
Print_ISBN
978-1-4799-5474-2
Type
conf
DOI
10.1109/ASDAM.2014.6998702
Filename
6998702
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