Title :
Detailed optical and electrical characterisation of green — Orange InGaN/GaN LEDs grown by MOVPE
Author :
Cavanagh, K. ; Liu, Cong ; Martin, T. ; Hopkins, M.A. ; Sivaraya, S. ; Allsopp, D.W.E.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Bath, Bath, UK
Abstract :
Green - orange light emitting diodes of were fabricated from InGaN/GaN wafers grown by MOVPE. Detailed measurements of the current and spectral dependence of their electroluminescence were made under low noise DC and pulsed conditions. The results revealed that low electrical to optical power conversion efficiency correlates with degrade current-voltage characteristics.
Keywords :
III-V semiconductors; MOCVD; electroluminescence; gallium compounds; indium compounds; light emitting diodes; optical fabrication; semiconductor epitaxial layers; vapour phase epitaxial growth; wide band gap semiconductors; InGaN-GaN; MOVPE; current dependence; current-voltage characteristics; electrical characterisation; electroluminescence; green-orange LED; green-orange light emitting diodes; low noise DC conditions; optical characterisation; pulsed conditions; spectral dependence; Current measurement; Electroluminescence; Epitaxial growth; Epitaxial layers; Light emitting diodes; Power conversion; Radiative recombination;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998708
