Detailed optical and electrical characterisation of green — Orange InGaN/GaN LEDs grown by MOVPE

Author

Cavanagh, K. ; Liu, Cong ; Martin, T. ; Hopkins, M.A. ; Sivaraya, S. ; Allsopp, D.W.E.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Bath, Bath, UK

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

Green - orange light emitting diodes of were fabricated from InGaN/GaN wafers grown by MOVPE. Detailed measurements of the current and spectral dependence of their electroluminescence were made under low noise DC and pulsed conditions. The results revealed that low electrical to optical power conversion efficiency correlates with degrade current-voltage characteristics.

Keywords

III-V semiconductors; MOCVD; electroluminescence; gallium compounds; indium compounds; light emitting diodes; optical fabrication; semiconductor epitaxial layers; vapour phase epitaxial growth; wide band gap semiconductors; InGaN-GaN; MOVPE; current dependence; current-voltage characteristics; electrical characterisation; electroluminescence; green-orange LED; green-orange light emitting diodes; low noise DC conditions; optical characterisation; pulsed conditions; spectral dependence; Current measurement; Electroluminescence; Epitaxial growth; Epitaxial layers; Light emitting diodes; Power conversion; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998708

Filename

6998708