Advanced methodology for fast 3-D TCAD electrothermal simulation of power devices

Author

Chvala, Ales ; Donoval, Daniel ; Marek, Jiri ; Pribytny, Patrik ; Molnar, Miklos

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

In this paper the new methodology for fast 3-D electrothermal simulation of complex power devices including the package and cooling assemblies is proposed and illustrated. A power MOSFET under an unclamped inductive switching (UIS) test of the device robustness is used to perform validation of the designed electrothermal simulation. The presented simulation approach contributes to full analysis of complex structures at high speed of simulation and simplicity of implementation. The methodology is developed for co-simulation platform SMAC.

Keywords

power MOSFET; semiconductor device models; semiconductor device packaging; semiconductor device testing; technology CAD (electronics); thermal management (packaging); 3D TCAD electrothermal simulation; SMAC cosimulation platform; UIS test; cooling assemblies; power MOSFET; power devices; unclamped inductive switching test; Analytical models; Finite element analysis; Integrated circuit modeling; MOSFET; Mathematical model; Semiconductor device modeling; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998711

Filename

6998711