DocumentCode :
1784461
Title :
Design and simulation of an integrated optical CMOS heart rate sensor
Author :
He, Dawei ; Liu, Cong ; Trachanis, D. ; Hese, J.V. ; Drogoudis, D. ; Fummi, F. ; Stefanni, F. ; Guamieri, V. ; Morgan, S.P. ; Hayes-Gill, B.R.
Author_Institution :
Electr. & Opt. Res. Div., Univ. of Nottingham, Nottingham, UK
fYear :
2014
fDate :
20-22 Oct. 2014
Firstpage :
1
Lastpage :
4
Abstract :
An optical CMOS heart rate sensor that processes the photoplethysmographic signal was designed and fabricated in Austriamicrosystems 0.35μm CMOS process. The sensor consists of photodiode, transimpedance amplifier, analogue bandpass filters, analogue-to-digital converters, digital signal processor, and a timing circuit that is used to modulate the external light-emitting diodes. The mixed-signal simulation has been carried out to validate the system design. With modulated green light source and integrated lock-in detection the sensor is capable of extracting clean photoplethysmographic signal when it is operated in reflectance mode. The heart rate output was compared with commercial devices and they show a good agreement. The chip-level integration enables a small foot print of the design and makes it suitable for the applications of ambulatory monitoring.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; band-pass filters; cardiology; light emitting diodes; operational amplifiers; optical sensors; patient monitoring; photodiodes; photoplethysmography; timing circuits; Austriamicrosystems; ambulatory monitoring; analogue bandpass filters; analogue-to-digital converters; chip-level integration; digital signal processor; external light-emitting diodes; integrated lock-in detection; integrated optical CMOS heart rate sensor; mixed-signal simulation; modulated green light source; photodiode; photoplethysmographic signal; reflectance mode; timing circuit; transimpedance amplifier; CMOS integrated circuits; Green products; Heart rate; Light emitting diodes; Light sources; Monitoring; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
Type :
conf
DOI :
10.1109/ASDAM.2014.6998713
Filename :
6998713
Link To Document :
بازگشت