DocumentCode :
1784641
Title :
A 3.6kV high performance solid state transformer based on 13kV SiC MOSFET
Author :
Fei Wang ; Gang Yao ; Huang, A. ; Wen Song ; Xijun Ni
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear :
2014
fDate :
24-27 June 2014
Firstpage :
1
Lastpage :
8
Abstract :
This paper presents the development of a distribution network solid state transformer (SST) based on high voltage (13kV) SiC MOSFET and JBS diode. This distribution SST is composed with a medium voltage ac/dc rectifier, medium voltage medium frequency dc/dc converter and a low voltage inverter. It´s able to be interfaced to 3.6kV distribution grid and output both a 400V dc and 240/120V ac. This paper presents the characterization of the high voltage SiC MOSFET devices, and the design of rectifier and dc/dc converter. The test results of its grid-connected operation including pre-charge, start up, regeneration, etc. are included to show the functionalities of the designed SST prototype.
Keywords :
power MOSFET; power transformers; silicon compounds; wide band gap semiconductors; SiC; distribution SST; distribution grid; high performance solid state transformer; high voltage MOSFET devices; low voltage inverter; medium voltage AC-DC rectifier; medium voltage medium frequency DC-DC converter; voltage 120 V; voltage 13 kV; voltage 240 V; voltage 3.6 kV; voltage 400 V; Inverters; Logic gates; Low voltage; MOSFET; Nickel; Pulse width modulation; Solids;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics for Distributed Generation Systems (PEDG), 2014 IEEE 5th International Symposium on
Conference_Location :
Galway
Type :
conf
DOI :
10.1109/PEDG.2014.6878693
Filename :
6878693
Link To Document :
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