Time to failure analysis of single mode long-wavelength InGaAsP vertical-cavity surface-emitting lasers

Author

Naeemi, Mohamad Ali ; Marjani, Saeid ; Peiravi, Ali

Author_Institution

Dept. of Electr. Eng., Ferdowsi Univ. of Mashhad, Mashhad, Iran

fYear

2014

fDate

20-22 May 2014

Firstpage

43

Lastpage

47

Abstract

In this paper, we investigate the time to failure (tf) analysis of a Single Mode 1.55 μm InGaAsP vertical cavity surface emitting laser (VCSEL) with two different electrical confinement structures. The electrical confinement introduced by the oxide aperture or air-posted design are compared with conventional structure. Air-posted VCSEL shows an average of 7.43X and 19.83X Improvement in time to failure than that of the similar oxide confined and conventional VCSEL, respectively. This paper provides key results of the device characteristics, including the DC V-I, junction temperature as a function of the optical power and the time to failure vs. junction temperature. Results suggest that the 1.55 μm InGaAsP air-posted VCSEL seems to be the most optimal choice for light sources in high reliability optical communication systems.

Keywords

arsenic compounds; failure analysis; gallium compounds; indium compounds; surface emitting lasers; InGaAsP; VCSEL; electrical confinement; failure analysis; light sources; optical communication systems; vertical-cavity surface-emitting lasers; wavelength 1.55 mum; Heating; Junctions; Mathematical model; Optical refraction; Optical surface waves; Vertical cavity surface emitting lasers; InGaAsP; Long-wavelength; Time to failure; VCSEL;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2014 22nd Iranian Conference on

Conference_Location

Tehran

Type

conf

DOI

10.1109/IranianCEE.2014.6999500

Filename

6999500