Title :
An analytical model for transfer characteristics and sub-threshold swings in double-gate tunnel FETs
Author :
Gholizadeh, Mahdi ; Hosseini, Seyed Ebrahim
Author_Institution :
Dept. of Electr. Eng., Ferdowsi Univ. of Mashhad, Mashhad, Iran
Abstract :
An analytical model for double-gate (DG) tunnel FETs (TFETs) using two-dimensional (2-D) solution of Poisson´s equation is presented. We derived analytical expressions for the drain current and sub-threshold swing from the maximum electric field using the Kane model. The model is validated via comparing it with TCAD simulation results for different sets of parameters. The results show a good agreement between the model and simulations. The model well predicts the effects of design parameters, such as gate oxide thickness, body thickness, gate oxide dielectric and channel length, on device characteristics which allows us to gain insight on the device operation.
Keywords :
Poisson equation; electric fields; field effect transistors; tunnel transistors; 2D solution; DG TFET; Kane model; Poisson equation; TCAD simulation; analytical model; body thickness; channel length; design parameters; device characteristics; double-gate tunnel FET; drain current; gate oxide dielectric; gate oxide thickness; maximum electric field; subthreshold swings; transfer characteristics; two-dimensional solution; Analytical models; Electric fields; Field effect transistors; Logic gates; Mathematical model; Tunneling; Analytical model; Band-to-Band Tunneling (BTBT); DG TFET; Poisson´s Equation; Subthreshold swing;
Conference_Titel :
Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
Conference_Location :
Tehran
DOI :
10.1109/IranianCEE.2014.6999501
