Title :
Modeling of the graphene based Schottky barrier solar cells on InGaN substrate
Author :
Arefinia, Zahra ; Asgari, Asghar
Author_Institution :
Res. Inst. for Appl. Phys. & Astron., Tabriz Univ., Tabriz, Iran
Abstract :
In this paper, for the first time, a new graphene-based Schottky barrier solar cells consisting of InxGa1-xN with low Indium contents (x <;0.45) is proposed. Then, their solar power conversion efficiency simulated and optimized using an analytical model taking into account radiative and Shockley-Read-Hall recombination. Also, the effect of the temperature and doping concentration of InxGa1-xN on the performance of the G/InxGa1-xN solar cells is evaluated.
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; graphene devices; indium compounds; semiconductor doping; solar cells; Shockley-Read-Hall recombination; doping concentration effect; graphene based Schottky barrier solar cells modeling; indium gallium nitride substrate; low Indium contents; radiative recombination; solar power conversion efficiency simulation; temperature effect; Doping; Gallium nitride; Graphene; Photonic band gap; Photovoltaic cells; Schottky barriers; Silicon; InGaN; conversion efficiency; graphene; solar cell;
Conference_Titel :
Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
Conference_Location :
Tehran
DOI :
10.1109/IranianCEE.2014.6999502
