Modeling of the graphene based Schottky barrier solar cells on InGaN substrate

Author

Arefinia, Zahra ; Asgari, Asghar

Author_Institution

Res. Inst. for Appl. Phys. & Astron., Tabriz Univ., Tabriz, Iran

fYear

2014

fDate

20-22 May 2014

Firstpage

53

Lastpage

56

Abstract

In this paper, for the first time, a new graphene-based Schottky barrier solar cells consisting of In_xGa_1-xN with low Indium contents (x <;0.45) is proposed. Then, their solar power conversion efficiency simulated and optimized using an analytical model taking into account radiative and Shockley-Read-Hall recombination. Also, the effect of the temperature and doping concentration of In_xGa_1-xN on the performance of the G/In_xGa_1-xN solar cells is evaluated.

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; graphene devices; indium compounds; semiconductor doping; solar cells; Shockley-Read-Hall recombination; doping concentration effect; graphene based Schottky barrier solar cells modeling; indium gallium nitride substrate; low Indium contents; radiative recombination; solar power conversion efficiency simulation; temperature effect; Doping; Gallium nitride; Graphene; Photonic band gap; Photovoltaic cells; Schottky barriers; Silicon; InGaN; conversion efficiency; graphene; solar cell;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2014 22nd Iranian Conference on

Conference_Location

Tehran

Type

conf

DOI

10.1109/IranianCEE.2014.6999502

Filename

6999502