Title :
The effects of base width variation on resonance behavior of Double-Hetero structure long wavelength transistor laser
Author :
Farjadian, Mohammad Reza ; Kaatuzian, Hassan ; Taghavi, Iman
Author_Institution :
Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
Base width variation effects on resonance frequency and resonance peak of Double-Hetero structure Long Wavelength Transistor Laser (DH-LWTL) is investigated. Resonance behavior has significant effects on optoelectronic performance of LWTL that calculated through its frequency response. In our structure, resonance peak maximized to 16.23 dB in 135 nm base width. Also, in 305 nm base width, resonance frequency saturated around 24 GHz.
Keywords :
bipolar transistors; optical saturation; quantum well lasers; base width variation effects; double-heterostructure long wavelength transistor laser; gain 16.23 dB; optoelectronic performance; resonance frequency saturation; Frequency response; Laser modes; Radiative recombination; Resonant frequency; Semiconductor lasers; Transistors; Long wavelength transistor laser; Quantum well; Resonance frequency; Resonance peak;
Conference_Titel :
Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
Conference_Location :
Tehran
DOI :
10.1109/IranianCEE.2014.6999510
