DocumentCode
1785440
Title
The effects of base width variation on resonance behavior of Double-Hetero structure long wavelength transistor laser
Author
Farjadian, Mohammad Reza ; Kaatuzian, Hassan ; Taghavi, Iman
Author_Institution
Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran, Iran
fYear
2014
fDate
20-22 May 2014
Firstpage
93
Lastpage
96
Abstract
Base width variation effects on resonance frequency and resonance peak of Double-Hetero structure Long Wavelength Transistor Laser (DH-LWTL) is investigated. Resonance behavior has significant effects on optoelectronic performance of LWTL that calculated through its frequency response. In our structure, resonance peak maximized to 16.23 dB in 135 nm base width. Also, in 305 nm base width, resonance frequency saturated around 24 GHz.
Keywords
bipolar transistors; optical saturation; quantum well lasers; base width variation effects; double-heterostructure long wavelength transistor laser; gain 16.23 dB; optoelectronic performance; resonance frequency saturation; Frequency response; Laser modes; Radiative recombination; Resonant frequency; Semiconductor lasers; Transistors; Long wavelength transistor laser; Quantum well; Resonance frequency; Resonance peak;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
Conference_Location
Tehran
Type
conf
DOI
10.1109/IranianCEE.2014.6999510
Filename
6999510
Link To Document