Significance of variation in various parameters on electrical characteristics of FinFET devices

On scaling the conventional MOSFET in sub-micrometer regime, the short channel effects (SCEs) deteriorates the device performance. Owing to a new device structure (FinFET) has been introduced. This paper presents the effect of variation in different parameters of FinFET such as structure, dimension, doping and oxide material used for various electrical characteristics (on-state current (Ion), Subthreshold Swing (SS), off-current (I_off) and threshold voltage (V_t)). As we increase the no. of gates in FinFET device, much better control of channel is obtained than the conventional MOSFET and SCEs are reduced to a great extent while scaling the device beyond 32 nm regime. The comparison has been drawn on 3-D SILVACO ATLAS simulations for different FinFET structures, based on simulation results Cylindrical-Gate All Around (Cy-GAA) FinFET exhibits the higher I_on current, smaller I_off current, and high I_on/I_off ratio due to its symmetrical structure and removal of corner effects.