A 2.6–13.7 GHz highly linear CMOS low noise amplifier for UWB applications

Author

Mazhabjafari, Babak ; Yavari, Mohammad

Author_Institution

Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran

fYear

2014

fDate

20-22 May 2014

Firstpage

296

Lastpage

299

Abstract

In this paper a highly linear differential CMOS low noise amplifier (LNA) for ultra-wideband (UWB) applications is proposed. The proposed LNA uses a linearization technique to improve both input second- and third-order intercept points (IIP2 and IIP3), simultaneously. The linearity is improved by canceling the common-mode part of all intermodulation (IM) components from the output current. Analysis and simulation results using a 90 nm RF-CMOS process with Spectre-RF show that the IIP3 and IIP2 are improved more than 11 and 35 dB, respectively, at the expense of increasing the noise figure only about 0.2 dB respected to the conventional differential common-gate (CG) LNA.

Keywords

CMOS analogue integrated circuits; differential amplifiers; linearisation techniques; low noise amplifiers; ultra wideband technology; wideband amplifiers; RF-CMOS process; Spectre-RF; UWB applications; common-mode part; differential common-gate LNA; frequency 2.6 GHz to 13.7 GHz; highly linear CMOS low noise amplifier; highly linear differential CMOS low noise amplifier; intermodulation components; linearization technique; noise figure; size 90 nm; ultra-wideband applications; CMOS integrated circuits; CMOS technology; Impedance matching; Linearity; Low-noise amplifiers; Noise; Noise measurement; CMOS low noise amplifier; IIP2; IIP3; Ultra wideband; common-mode current; distortion cancellation; noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2014 22nd Iranian Conference on

Conference_Location

Tehran

Type

conf

DOI

10.1109/IranianCEE.2014.6999551

Filename

6999551