DocumentCode :
1785537
Title :
Low-voltage multi-VTH single-supply level converters based on CNTFETs
Author :
Moghaddam, Mahta ; Moaiyeri, Mohammad Hossein ; Jalali, A. ; Eshghi, Mohammad
Author_Institution :
ECE Dept., Shahid Beheshti Univ., Tehran, Iran
fYear :
2014
fDate :
20-22 May 2014
Firstpage :
366
Lastpage :
370
Abstract :
In this paper, new single supply voltage level converters (SSLCs) based on the Carbon nanotube field effect transistors (CNTFETs) are proposed for low-power design. Nowadays, in short channel devices, low power design especially in battery-powered digital VLSI systems becomes a very significant challenge. Multi-VDD design is an effective approach for lowering the power consumption without degrading the speed of the integrated circuits. In these circuits in order to convert the voltage levels between the different voltage islands, voltage level converters (LCs) are required. On the other hand, CNTFET refrains most of the limitations of the nanoscale MOSFET devices. Moreover, the threshold voltage of the CNFETs can be determined by adopting proper diameters for their nanotubes. The proposed multi-VTH CNTFET-based design method reduces the number of transistors and considerably improves the energy efficiency and robustness of the LC circuits. The results of the simulations, conducted based on the Stanford CNTFET model at 22nm technology node, demonstrate the superiority of the proposed designs in terms of power consumption, delay, PDP and sensitivity to major process variations compared to the other common and most efficient LC circuits.
Keywords :
VLSI; carbon nanotube field effect transistors; low-power electronics; power consumption; LC circuit; SSLC; Stanford CNTFET model; battery-powered digital VLSI system; carbon nanotube field effect transistor; energy efficiency; low-power design; low-voltage multi-Vth single-supply level converter; multi-VDD design; nanoscale MOSFET device; power consumption; short channel device; size 22 nm; threshold voltage; voltage island; voltage level converter; CNTFETs; MOSFET; Nanoscale devices; Power demand; Robustness; Threshold voltage; CNTFET; Multi-VDD circuit; Single-Supply Level Converter; Ultra-Low-Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
Conference_Location :
Tehran
Type :
conf
DOI :
10.1109/IranianCEE.2014.6999566
Filename :
6999566
Link To Document :
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