DocumentCode :
1785542
Title :
A new low-leakage T-Gate based 8T SRAM cell with improved write-ability in 90nm CMOS technology
Author :
Pasandi, Ghasem ; Qasemi, Ehsan ; Fakhraie, S. Mehdi
Author_Institution :
Silicon Intell. & VLSI Signal Process. Lab., Univ. of Tehran, Tehran, Iran
fYear :
2014
fDate :
20-22 May 2014
Firstpage :
382
Lastpage :
386
Abstract :
In this paper an innovative T-Gate based Static Random Access Memory (SRAM) cell design is proposed which improves write-ability of conventional designs in subthreshold operating region. Write-ability of proposed design is improved by cutting the feedback loop in SRAM cell and omitting the challenging inverters effect during write state by adding a T-Gate. This T-Gate is opaque during write operation and transparent for rest of operations. Due to improved write operation, it is possible to choose minimum size access transistors to remove access transistor sizing conflict of conventional 6T SRAM cell. As a result, read stability will be improved. Added T-Gate in the middle of the cell helps to better transferring both of logic-1 and 0 that leads to having full swing at the internal nodes of SRAM cell. As a result leakage power of proposed cell is improved over the previous design introduced in [1]. Simulation results show that proposed design improves leakage power of single cell by 38% at T=110°C and at VDD=500mV over that design. WNM of proposed design is increased by 188% and 62% over the cell in [1] and conventional 6T SRAM cell, respectively.
Keywords :
CMOS memory circuits; SRAM chips; logic gates; 6T SRAM cell; CMOS technology; T-gate based 8T SRAM cell; improved write-ability; leakage power; minimum size access transistors; read stability; size 90 nm; static random access memory cell design; temperature 110 C; voltage 500 mV; CMOS integrated circuits; Computer architecture; Feedback loop; MOSFET; Microprocessors; SRAM cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
Conference_Location :
Tehran
Type :
conf
DOI :
10.1109/IranianCEE.2014.6999569
Filename :
6999569
Link To Document :
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