DocumentCode
1785592
Title
Numerical simulation of InGaAsP-InP buried stripe semiconductor laser
Author
Mahmoudieh, Afshin ; Soroosh, M. ; Sabaeian, Mohammad
Author_Institution
Dept. of Electr. Eng., Shahid Chamran Univ., Ahvaz, Iran
fYear
2014
fDate
20-22 May 2014
Firstpage
496
Lastpage
499
Abstract
A numerical simulation of a steady state model based on the traveling wave equations of the spontaneous and stimulated emission fields for an InGaAsP-InP buried Stripe semiconductor laser is presented. To solve the field equations the finite difference method is employed. The optical output power versus the bias current is calculated.
Keywords
III-V semiconductors; finite difference methods; indium compounds; laser beams; semiconductor lasers; spontaneous emission; stimulated emission; InGaAsP-InP; InGaAsP-InP buried stripe semiconductor laser; bias current; field equations; finite difference method; numerical simulation; optical output power; spontaneous emission fields; steady state model; stimulated emission fields; traveling wave equations; Charge carrier density; Laser modes; Mathematical model; Numerical models; Photonics; Semiconductor device modeling; Semiconductor lasers; InGaAsP-InP; Semiconductor laser; Traveling wave equations; finite difference method;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
Conference_Location
Tehran
Type
conf
DOI
10.1109/IranianCEE.2014.6999593
Filename
6999593
Link To Document