Title :
System-level assessment and area evaluation of Spin Wave logic circuits
Author :
Zografos, Odysseas ; Raghavan, Praveen ; Amaru, Luca ; Soree, Bart ; Lauwereins, Rudy ; Radu, Iuliana ; Verkest, D. ; Thean, A.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Spin Wave Devices (SWDs) are promising candidates for scaling electronics beyond the domain of CMOS. In contrast to traditional charge-based technologies, SWDs rely on propagating oscillation of magnetization as information carrier. Thanks to the intrinsic wave computation capability of these devices, the majority gate is implemented with low physical re-sources. Being more expressive than standard NAND/NOR gates, the compact majority gate pushes further the expected benefits of SWDs over CMOS. In this paper, we present a realistic design framework for SWD-based logic circuits, accounting for both limitations and advantages deriving from the new technology. We use a majority logic synthesis tool to fully exploit the SWD functionality. In the experiments, we focus on the estimated area. We consider several arithmetic-intensive benchmarks, and compare their SWD area with three state-of-the-art CMOS nodes. We show that an area reduction up to 11.3x is possible, as compared to a 10nm CMOS technology.
Keywords :
CMOS logic circuits; logic design; logic gates; magnetic logic; magnetisation; magnetoelectronics; CMOS nodes; CMOS technology; NAND-NOR gates; SWD-based logic circuit design framework; area evaluation; arithmetic-intensive benchmarks; charge-based technology; compact majority gate; information carrier; intrinsic wave computation capability; low physical resources; magnetization oscillation; majority logic synthesis tool; size 10 nm; spin wave logic circuits; system-level assessment; Benchmark testing; CMOS integrated circuits; Computer architecture; Logic gates; Microprocessors; Three-dimensional displays; Transistors;
Conference_Titel :
Nanoscale Architectures (NANOARCH), 2014 IEEE/ACM International Symposium on
Conference_Location :
Paris
DOI :
10.1109/NANOARCH.2014.6880475