• DocumentCode
    1785639
  • Title

    HSPICE macromodel of a Programmable Metallization Cell (PMC) and its application to memory design

  • Author

    Junsangsri, Pilin ; Lombardi, Floriana ; Jie Han

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
  • fYear
    2014
  • fDate
    8-10 July 2014
  • Firstpage
    45
  • Lastpage
    50
  • Abstract
    This paper presents a new HSPICE macromodel of a Programmable Metallization Cell (PMC). The electrical characteristics of a PMC are simulated by using a geometric model that considers the vertical and lateral growth/dissolution of the metallic filament. The selection of the parameters is based on operational features, so the electrical characterization of the PMC is simple, easy to simulate and intuitive. The I-V and R-V plots of a PMC are generated at a very small error compared with experimental data; the proposed model also shows a small error for the relationship between the switching time and the pulse amplitude. The use of a PMC as resistive element in a crossbar memory is also presented; it is shown that a PMC-based crossbar offers substantial improvements over other resistive technologies.
  • Keywords
    SPICE; integrated circuit design; integrated circuit metallisation; integrated circuit modelling; random-access storage; CBRAM; HSPICE macromodel; I-V plots; PMC-based crossbar; R-V plots; conducting bridge random access memory; crossbar memory; electrical characteristics; geometric model; lateral growth-dissolution; memory design; metallic filament; parameter selection; programmable metallization cell; pulse amplitude; resistive element; switching time; vertical growth-dissolution; Arrays; Electrodes; Integrated circuit modeling; Metallization; Resistance; Switches; Voltage measurement; Conducting Bridge Random Access Memory (CBRAM); Emerging Technology; HSPICE; Modeling; Programmable Metallization Cell (PMC);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscale Architectures (NANOARCH), 2014 IEEE/ACM International Symposium on
  • Conference_Location
    Paris
  • Type

    conf

  • DOI
    10.1109/NANOARCH.2014.6880477
  • Filename
    6880477