• DocumentCode
    1785659
  • Title

    Floating-point unit design with nano-electro-mechanical (NEM) relays

  • Author

    Dutta, Suparna ; Stojanovic, V.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2014
  • fDate
    8-10 July 2014
  • Firstpage
    145
  • Lastpage
    150
  • Abstract
    Digital circuits made with nano-electro-mechanical (NEM) relays offer energy-efficiency benefits over CMOS since they have zero leakage power and can offer circuit level performance that competes with CMOS. In this paper we show how new relay circuit design techniques combined with those we already demonstrated on smaller relay blocks enable us to optimize the design of the most complex arithmetic unit, the floating-point unit (FPU). The energy, performance, and area trade-offs of FPU designs with NEM relays are examined and compared with those of state-of-the-art CMOS designs in an equivalent scaled process. Circuits that are critical path bottlenecks for the FPU specifically, most notably the leading zero detector (LZD) and leading zero anticipator (LZA), are optimized with new relay-tailored circuit techniques. These optimizations reduce the NEM relay FPU latency from 71 mechanical delays in an optimal-CMOS-style implementation to 16 mechanical delays in a generalized custom NEM relay implementation. In a 90 nm process node, the FPU designed with NEM relays is projected to achieve 15× lower energy per operation compared to the FPU designed with CMOS.
  • Keywords
    CMOS digital integrated circuits; floating point arithmetic; microrelays; nanoelectromechanical devices; CMOS designs; FPU designs; LZA; LZD; NEM relay FPU latency; area trade-offs; complex arithmetic unit; digital circuits; energy trade-offs; energy-efficiency; equivalent scaled process; floating-point unit design; leading zero anticipator; leading zero detector; mechanical delays; nanoelectromechanical relays; performance trade-offs; relay blocks; relay circuit design techniques; size 90 nm; Adders; CMOS integrated circuits; Delays; Logic gates; Optimization; Relays; Switches; MEMS nano-electro-mechanical (NEM) relay; floating-point unit; fused multiply-add; leading zero detector;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscale Architectures (NANOARCH), 2014 IEEE/ACM International Symposium on
  • Conference_Location
    Paris
  • Type

    conf

  • DOI
    10.1109/NANOARCH.2014.6880487
  • Filename
    6880487