InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer

We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO₂/Si substrate before fabricating the BH. An O₂ plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.