Title :
Multi-bandgap III-V on insulator wafer fabricated by quantum well intermixing for III-V CMOS photonics platform
Author :
Kuramochi, Misa ; Takenaka, Mitsuru ; Ikku, Yuki ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
We have investigated a fabrication procedure of a multi-bandgap III-V on insulator (III-V-OI) wafer by quantum well intermixing for active/passive integration on III-V CMOS photonics platform. We have sucessfully achieved approximately 50-nm wavelength shift in photoluminecense peak on the III-V-OI wafer by P impantation with 40 keV implant energy.
Keywords :
CMOS analogue integrated circuits; III-V semiconductors; integrated optics; semiconductor quantum wells; III-V CMOS photonics platform; P implantation; active-passive integration; electron volt energy 40 keV; fabrication procedure; implant energy; multi-bandgap III-V-OI wafer; multibandgap III-V-on-insulator wafer; photoluminecense peak; quantum well intermixing; Arrayed waveguide gratings; CMOS integrated circuits; Fabrication; Implants; Indium phosphide; Insulators; Photonics;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880518
