• DocumentCode
    1785714
  • Title

    Multi-bandgap III-V on insulator wafer fabricated by quantum well intermixing for III-V CMOS photonics platform

  • Author

    Kuramochi, Misa ; Takenaka, Mitsuru ; Ikku, Yuki ; Takagi, Shinichi

  • Author_Institution
    Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2014
  • fDate
    11-15 May 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have investigated a fabrication procedure of a multi-bandgap III-V on insulator (III-V-OI) wafer by quantum well intermixing for active/passive integration on III-V CMOS photonics platform. We have sucessfully achieved approximately 50-nm wavelength shift in photoluminecense peak on the III-V-OI wafer by P impantation with 40 keV implant energy.
  • Keywords
    CMOS analogue integrated circuits; III-V semiconductors; integrated optics; semiconductor quantum wells; III-V CMOS photonics platform; P implantation; active-passive integration; electron volt energy 40 keV; fabrication procedure; implant energy; multi-bandgap III-V-OI wafer; multibandgap III-V-on-insulator wafer; photoluminecense peak; quantum well intermixing; Arrayed waveguide gratings; CMOS integrated circuits; Fabrication; Implants; Indium phosphide; Insulators; Photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 26th International Conference on
  • Conference_Location
    Montpellier
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2014.6880518
  • Filename
    6880518
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1785714