Title :
Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser — Dependence of the base layer structure
Author :
Yoshida, Takafumi ; Yukinari, Masashi ; Kaneko, Tetsuya ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser (TL) depend on base layer structure were investigated through simulation and fabrication. As a result, while the TL has the same current gain, better lasing characteristics were observed for thinner thickness and wider bandgap.
Keywords :
III-V semiconductors; aluminium compounds; laser beams; optical communication equipment; optical fabrication; semiconductor lasers; transistors; TL; bandgap; base layer structure; laser gain; lasing characteristics; npn-AlGaInAs/InP transistor laser; optical fabrication; simulation; thickness; wavelength 1.3 mum; Indium phosphide; Modulation; Photonic band gap; Surface emitting lasers; Transistors;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880520
