Title :
A sub-mW D-band 2nd harmonic oscillator using InP-based quantum-effect tunneling devices
Author :
Jooseok Lee ; Maengkyu Kim ; Jongwon Lee ; Kyounghoon Yang
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Abstract :
A compact D-band 2nd harmonic oscillator utilizing a push-push approach is demonstrated for the first time by using InP-based RTDs (resonant tunneling diodes). In order to achieve the low power operation, the NDC (negative differential conductance) characteristic at a low voltage of the RTD is used for RF signal generation. The implemented RTD-based oscillator by using an InP-based RTD MMIC technology operates at an oscillation frequency of 164.6 GHz. The total dc power consumption of the RTD oscillator is 0.4 mW, which is the lowest value reported up to date in the mm-wave D-band MMIC oscillators.
Keywords :
III-V semiconductors; MIMIC; MMIC oscillators; harmonic oscillators (circuits); indium compounds; low-power electronics; millimetre wave diodes; millimetre wave oscillators; quantum interference devices; resonant tunnelling diodes; InP; NDC; RF signal generation; RTD MMIC technology; RTD-based oscillator; dc power consumption; frequency 164.6 GHz; low power operation; mm-wave D-band MMIC oscillators; negative differential conductance characteristic; power 0.4 mW; push-push approach; quantum-effect tunneling devices; resonant tunneling diodes; sub-mW D-band 2nd harmonic oscillator; CMOS integrated circuits; Harmonic analysis; Indium phosphide; MMICs; Oscillators; Power demand; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880527
