DocumentCode
1785731
Title
A sub-mW D-band 2nd harmonic oscillator using InP-based quantum-effect tunneling devices
Author
Jooseok Lee ; Maengkyu Kim ; Jongwon Lee ; Kyounghoon Yang
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fYear
2014
fDate
11-15 May 2014
Firstpage
1
Lastpage
2
Abstract
A compact D-band 2nd harmonic oscillator utilizing a push-push approach is demonstrated for the first time by using InP-based RTDs (resonant tunneling diodes). In order to achieve the low power operation, the NDC (negative differential conductance) characteristic at a low voltage of the RTD is used for RF signal generation. The implemented RTD-based oscillator by using an InP-based RTD MMIC technology operates at an oscillation frequency of 164.6 GHz. The total dc power consumption of the RTD oscillator is 0.4 mW, which is the lowest value reported up to date in the mm-wave D-band MMIC oscillators.
Keywords
III-V semiconductors; MIMIC; MMIC oscillators; harmonic oscillators (circuits); indium compounds; low-power electronics; millimetre wave diodes; millimetre wave oscillators; quantum interference devices; resonant tunnelling diodes; InP; NDC; RF signal generation; RTD MMIC technology; RTD-based oscillator; dc power consumption; frequency 164.6 GHz; low power operation; mm-wave D-band MMIC oscillators; negative differential conductance characteristic; power 0.4 mW; push-push approach; quantum-effect tunneling devices; resonant tunneling diodes; sub-mW D-band 2nd harmonic oscillator; CMOS integrated circuits; Harmonic analysis; Indium phosphide; MMICs; Oscillators; Power demand; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location
Montpellier
Type
conf
DOI
10.1109/ICIPRM.2014.6880527
Filename
6880527
Link To Document