Title :
InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate
Author :
Desplanque, Ludovic ; Han, Xiaoyu ; Fahed, Maria ; Chinni, Vinay K. ; Troadec, D. ; Chauvat, M.-P. ; Ruterana, P. ; Wallart, Xavier
Author_Institution :
Inst. d´Electron. de Microelectron. et de Nanotechnol., Univ. Lille 1, Villeneuve-d´Ascq, France
Abstract :
We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; tunnel diodes; Esaki tunnel diodes; GaSb; GaSb (001) substrate; InAs-AlGaSb; selective area molecular beam epitaxy; Apertures; Current density; Molecular beam epitaxial growth; Substrates; Tunneling;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880530
