Title :
Dependence of the diffusion of zinc from zinc-into ruthenium-doped indium phosphide on zinc concentration
Author :
Yamaguchi, Hitoshi ; Nagira, T. ; Kawazu, Zempei ; Ono, Keishi ; Takemi, Masayoshi
Author_Institution :
High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan
Abstract :
We investigated the Zn concentration dependence of Zn diffusion from Zn-doped InP (Zn-InP) to Ru-doped InP (Ru-InP). As semi-insulated InP, Ru-InP shows advantages in terms of higher resistivity and lower capacitance when Ru-InP is sandwiched by Zn-InP. Control of the diffusion of Zn from the adjacent Zn-InP layer is required to achieve laser diodes with superior characteristics. In this paper, we examined the diffusion of Zn at a Ru-InP stacking structure sandwiched by Zn-InP using metal-organic vapor phase epitaxy.
Keywords :
III-V semiconductors; MOCVD; capacitance; diffusion; electrical resistivity; indium compounds; ruthenium; sandwich structures; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; zinc; InP:Ru; InP:Zn; adjacent Zn-doped InP layer; capacitance; laser diodes; metal-organic vapor phase epitaxy; resistivity; ruthenium-doped indium phosphide stacking structure; semi-insulated InP; zinc concentration dependence; zinc diffusion control; Conductivity; Epitaxial growth; Epitaxial layers; Fiber lasers; Indium phosphide; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880532
