DocumentCode :
1785752
Title :
Native oxides formation on MOVPE grown binary III-V materials — Impact on surface wettability
Author :
Gocalinska, A. ; Bogdan, Justin ; Hughes, G. ; Pelucchi, E.
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
fYear :
2014
fDate :
11-15 May 2014
Firstpage :
1
Lastpage :
2
Abstract :
The native oxides formation on ambient-stored metalorganic vapour phase epitaxy (MOVPE) grown GaAs, InP and InAs is documented by contact angle measurements and X-ray photoelectron spectroscopy (XPS). The time dependent transitions from hydrophobic to hydrophilic states are presented alongside the change in relative amount of different types of oxides forming on the epitaxial surfaces. We present a qualitative agreement of wettability properties with the amount of group III oxides and lack of such correlation with the overall oxide composition, somehow indicating a (surprising) minor role of group V oxides.
Keywords :
III-V semiconductors; MOCVD; X-ray photoelectron spectra; contact angle; gallium arsenide; hydrophilicity; hydrophobicity; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wetting; GaAs; InAs; InP; MOVPE; X-ray photoelectron spectroscopy; XPS; ambient-stored metalorganic vapour phase epitaxy; binary III-V materials; contact angle measurements; epitaxial surfaces; group III oxides; group V oxides; hydrophilic states; hydrophobic states; native oxide formation; oxide composition; surface wettability; time dependent transitions; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Surface morphology; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
Type :
conf
DOI :
10.1109/ICIPRM.2014.6880537
Filename :
6880537
Link To Document :
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