DocumentCode :
1785756
Title :
Modeling and tolerance analysis of monolithic InP-based dual polarization QPSK transmitter
Author :
Arellano, C. ; Richter, A. ; Mingaleev, S. ; Koltchanov, I. ; Kazmierski, C.
Author_Institution :
VPIphotonics GmbH, Berlin, Germany
fYear :
2014
fDate :
11-15 May 2014
Firstpage :
1
Lastpage :
2
Abstract :
We present a detailed circuit model for a monolithic integrated InP transmitter and its application for the study of technological limitations such the impact of non-ideal phase shifters and reflections at interfaces.
Keywords :
III-V semiconductors; indium compounds; integrated optics; optical phase shifters; optical polarisers; optical transmitters; quadrature phase shift keying; InP; circuit model; interface reflections; modeling analysis; monolithic InP-based dual polarization QPSK transmitter; monolithic integrated InP transmitter; nonideal phase shifters; technological limitations; tolerance analysis; Fluctuations; Indium phosphide; Integrated circuit modeling; Phase shifters; Photonics; Reflection; Transmitters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
Type :
conf
DOI :
10.1109/ICIPRM.2014.6880539
Filename :
6880539
Link To Document :
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