DocumentCode :
1785762
Title :
Fabrication of submicron planar Gunn diode
Author :
Khalid, Amir ; Thoms, S. ; Macintyre, D. ; Thayne, I.G. ; Cumming, David R. S.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear :
2014
fDate :
11-15 May 2014
Firstpage :
1
Lastpage :
3
Abstract :
We present, for the first time, the fabrication process for a submicron planar Gunn diode in In0.53Ga0.47As on an InP substrate operating at 265 GHz. A novel two stage lift off method has been developed to achieve a submicron gaps between contacts down to 135 nm with widths up to 120 μm.
Keywords :
Gunn diodes; III-V semiconductors; gallium arsenide; indium compounds; millimetre wave diodes; semiconductor epitaxial layers; In0.53Ga0.47As-InP; InP; InP substrate; frequency 265 GHz; semiconductor device fabrication; submicron gaps; submicron planar Gunn diode; two stage lift off method; Current measurement; Fabrication; Indium phosphide; Metals; Semiconductor device measurement; Semiconductor diodes; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
Type :
conf
DOI :
10.1109/ICIPRM.2014.6880542
Filename :
6880542
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1785762
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