• DocumentCode
    1785762
  • Title

    Fabrication of submicron planar Gunn diode

  • Author

    Khalid, Amir ; Thoms, S. ; Macintyre, D. ; Thayne, I.G. ; Cumming, David R. S.

  • Author_Institution
    Sch. of Eng., Univ. of Glasgow, Glasgow, UK
  • fYear
    2014
  • fDate
    11-15 May 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We present, for the first time, the fabrication process for a submicron planar Gunn diode in In0.53Ga0.47As on an InP substrate operating at 265 GHz. A novel two stage lift off method has been developed to achieve a submicron gaps between contacts down to 135 nm with widths up to 120 μm.
  • Keywords
    Gunn diodes; III-V semiconductors; gallium arsenide; indium compounds; millimetre wave diodes; semiconductor epitaxial layers; In0.53Ga0.47As-InP; InP; InP substrate; frequency 265 GHz; semiconductor device fabrication; submicron gaps; submicron planar Gunn diode; two stage lift off method; Current measurement; Fabrication; Indium phosphide; Metals; Semiconductor device measurement; Semiconductor diodes; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 26th International Conference on
  • Conference_Location
    Montpellier
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2014.6880542
  • Filename
    6880542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1785762